v rrm = 400 v - 600 v i f(av) = 100 a features ? high surge capability to-244 package ? types from 400 v to 600 v v rrm ? not esd sensitive parameter symbol MURF10040(r) unit repetitive peak reverse voltage v rrm 400 v rms reverse voltage v rms 280 v dc blocking voltage v 400 v MURF10040 thru murf10060r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions silicon super fast recover y diode murf10060(r) 600 420 600 dc blocking voltage v dc 400 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol MURF10040(r) unit a verage forward current (per pkg) i f(av) 100 a peak forward surge current (per leg) i fsm 1500 a maximum instantaneous forward voltage (per leg) 1.3 25 a 3ma maximum reverse recovery time (per leg) t rr 90 ns thermal characteristics maximum thermal resistance, junction - case (per leg) r jc 1.00 c/w t j = 125 c i fm = 50 a, t j = 25 c 1500 -55 to 150 murf10060(r) 100 i f =0.5 a, i r =1.0 a, i rr = 0.25 a t j = 25 c 25 3 110 1.00 1.70 electrical characteristics, at tj = 25 c, unless otherwise specified conditions t c = 140 c t p = 8.3 ms, half sine v f v maximum reverse current at rated dc blocking voltage (per leg) i r 600 -55 to 150 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
MURF10040 thru murf10060r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MURF10040 thru murf10060r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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